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1 cghv1f006s 6 w, dc - 18 ghz, 40v, gan hemt crees cghv1f006s is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities. the device can be deployed for l, s, c, x and ku-band amplifer applications. the datasheet specifcations are based on a c-band (5.5 - 6.5 ghz) amplifer. additional application circuits are available for c-band at 5.8 ghz - 7.2 ghz and x-band at 7.9 - 8.4 ghz and 8.5 - 9.6 ghz. the cghv1f006s operates on a 40 volt rail circuit while housed in a 3mm x 4mm, surface mount, dual-fat-no-lead (dfn) package. under reduced power, the transistor can operate below 40v to as low as 20v v dd, maintaining high gain and effciency. package type: 3x4 dfn pn: cghv1f006s r e v 2 . 2 C j a n u a r y 2 0 1 6 features for 40 v in cghv1f006s-amp ? up to 18 ghz operation ? 8 w typical output power ? 17 db gain at 6.0 ghz ? 15 db gain at 9.0 ghz ? application circuits for 5.8 - 7.2 ghz, 7.9 - 8.4 ghz, and 8.5 - 9.6 ghz. ? high degree of apd and dpd correction can be applied typical performance 5.5-6.5 ghz (t c = 25?c) , 40 v parameter 5.5 ghz 6.0 ghz 6.5 ghz units small signal gain 15.4 16.5 17.8 db output power @ p in = 28 dbm 38.6 39.3 39.0 dbm drain effciency @ p in = 28 dbm 55 57 52 % note: measured in the cghv1f006s-amp application circuit. pulsed 100 s 10% duty. listing of available hardware application circuits / demonstration circuits application circuit operating frequency amplifer class operating voltage cghv1f006s-amp1 5.85 - 7.2 ghz class a/b 40 v CGHV1F006S-AMP2 7.9 - 8.4 ghz class a/b 40 v cghv1f006s-amp3 8.5 - 9.6 ghz class a/b 40 v cghv1f006s-amp4 4.9 - 5.9 ghz class a/b 20 v subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units notes drain-source voltage v dss 100 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 1.2 ma 25?c maximum drain current 1 i dmax 0.95 a 25?c soldering temperature 2 t s 245 ?c case operating temperature 3,4 t c -40, +150 ?c thermal resistance, junction to case 5 r jc 14.5 ?c/w 85?c note: 1 current limit for long term, reliable operation 2 refer to the application note on soldering at www.cree.com/ rf/document-library 3 simulated at p diss = 2.4 w 4 t c = case temperature for the device. it refers to the temperature at the ground tab underneath the package. the pcb will add additional thermal resistance. 5 the r th for crees application circuit, cghv1f006s-amp, with 31 (?11 mil) via holes designed on a 20 mil thick rogers 5880 pcb, is 3.9 c/w. the total r th from the heat sink to the junction is 14.5 c/w + 3.9 c/w = 18.4 c/w. electrical characteristics (t c = 25?c) - 40 v typical characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.6 -3.0 -2.4 v dc v ds = 10 v, i d = 1.2 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 40 v, i d = 60 ma saturated drain current 2 i ds C -1.0 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v (br)dss 100 C C v dc v gs = -8 v, i d = 1.2 ma rf characteristics 3 (t c = 25 ? c, f 0 = 6.0 ghz unless otherwise noted) gain g C 16 - db v dd = 40 v, i dq = 60 ma, p in = 0 dbm output power 4 p out C 38.5 C dbm v dd = 40 v, i dq = 60 ma, p in = 28 dbm drain effciency 4 C 55 - % v dd = 40 v, i dq = 60 ma, p in = 28 dbm output mismatch stress 4 vswr - 10 : 1 - y no damage at all phase angles, v dd = 40 v, i dq = 60 ma, p in = 28 dbm dynamic characteristics input capacitance 5 c gs C 1.3 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz output capacitance 5 c ds C 0.31 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.04 C pf v ds = 40 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging 2 scaled from pcm data 3 measured in cghv1f006s-amp 4 pulsed 100 s, 10% duty cycle 5 includes package cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 electrical characteristics when tested in cghv1f006s-amp1 at c-band under oqpsk characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 5.8 - 7.2 ghz unless otherwise noted) gain g C 17.5 - db v dd = 40 v, i dq = 60 ma, p in = 0 dbm output power 2 p out C 39 C dbm v dd = 40 v, i dq = 60 ma, p in = 27 dbm drain effciency 2 C 55 - % v dd = 40 v, i dq = 60 ma, p in = 27 dbm oqpsk 3 aclr - -36 - dbc v dd = 40 v, i dq = 60 ma, p out = 33 dbm output mismatch stress 2 vswr C 10 : 1 C y no damage at all phase angles, v ds = 40 v, v gs = -8 v, p in = 27 dbm notes: 1 measured in cghv1f006s-amp1 application circuit 2 pulsed 100 s, 10% duty cycle 3 oqpsk modulated signal, 1.6 msps, pn23, alpha filter = 0.2 offset = 1.6 mhz typical performance - cghv1f006s-amp1 at c-band under oqpsk figure 1. - typical small signal response of cghv1f006s-amp1 application circuit v dd = 40 v, i dq = 60 ma 0 10 20 30 m a g n i tu d e (d b ) -30 -20 -10 5.0 5.5 6.0 6.5 7.0 7.5 8.0 m a g n i tu d e (d b ) frequency (ghz) s11 s21 s22 cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance in application circuit cghv1f006s-amp1 figure 2. - typical gain, effciency and oqpsk performance vs frequency p out = 33 dbm. v dd = 40 v, i dq = 60 ma figure 3. - typical gain, effciency and oqpsk performance vs input power oqpsk transfer frequency = 7.2 ghz, v dd = 40 v, i dq = 60 ma -30 -25 -20 -15 20 25 30 35 oqpsk of f set ( d b c) gai n ( d b ) ef f i ci en cy ( % ) cghv1f006s oqpsk transfer @ 7.2ghz deff gain_ -oset_ +oset_ -50 -45 -40 -35 0 5 10 15 10 15 20 25 30 35 oqpsk of f set ( d b c) gai n ( d b ) ef f i ci en cy ( % ) input power (dbm) effciency gain offset effciency gain oset -20 -15 -10 -5 0 20 25 30 35 40 oqpsk of f set ( d b c) gai n ( d b ) an d ef f i ci en cy ( % ) cghv1f006s oqpsk performance at 33dbm efficiency gain offset -40 -35 -30 -25 0 5 10 15 5.8 6.0 6.2 6.4 6.6 6.8 7.0 7.2 oqpsk of f set ( d b c) gai n ( d b ) an d ef f i ci en cy ( % ) frequency (ghz) offset gain effciency cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance in application circuit cghv1f006s-amp1 figure 4. - typical pulsed power response v dd = 40 v, i dq = 60 ma, 100 s, 10% duty, p in = 27 dbm cghv1f006s-amp1 application circuit bill of materials, oqpsk designator description qty r1 res, 15, ohm, +1/-1%, 1/16 w, 0402 1 r2 res, 100, ohm, +1/-1%, 1/16 w, 0603 1 c1, c14 cap, 1.8 pf, 0.1 pf, 0402, atc 2 c2 cap, 2.0 pf, 0.1 pf, 0402, atc 1 c3, c8 cap, 1.5 pf, 0.1 pf, 0402, atc 2 c4 cap, 10 pf, 5%, 0603, atc 1 c5, c10 cap, 470 pf, 5%, 100 v, 0603, x 2 c6, c11 cap, 33000 pf, 0805, 100v, x7r 2 c7 cap, 10 uf, 16 v, tantalum 1 c9 cap, 20 pf, 5%, 0603, atc 1 c12 cap, 1.0 uf, 100v, 10% x7r, 1210 1 c13 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 pcb, rt5880, 0.020 thk, cghv1f006s 1 j3 header rt>plz .1cen lk 5pos 1 q1 qfn transistor cghv1f006s 1 55 60 65 70 75 38.0 38.5 39.0 39.5 40.0 d r a i n effi c i e n c y (% ) o u tp u t po w e r (d b m ) 35 40 45 50 36.0 36.5 37.0 37.5 5.70 5.90 6.10 6.30 6.50 6.70 6.90 7.10 7.30 d r a i n effi c i e n c y (% ) o u tp u t po w e r (d b m ) frequency (ghz) output power drain efficiency cghv1f006s-amp1 application circuit cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 cghv1f006s-amp1 application circuit schematic, oqpsk cghv1f006s-amp1 application circuit outline, oqpsk c3 1.5 pf c6 0.033 c7 10 c9 20 pf c10 470 pf c13 33 c4 10 pf c14 1.8 pf c11 0.033 c12 1 1 2 3 q1 c1 1.8 pf c8 1.5 pf r2 100 ohm c5 470 pf c2 2.0 pf r1 15 ohm 1 2 3 4 5 j3 j1 j2 vd=+40v gnd vg=-2.0v to -3.5v typ cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 electrical characteristics when tested in CGHV1F006S-AMP2 at x-band, satcom characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 7.9 - 8.4 ghz unless otherwise noted) gain g C 15 - db v dd = 40 v, i dq = 60 ma, p in = 0 dbm output power 2 p out C 39 C dbm v dd = 40 v, i dq = 60 ma, p in = 28 dbm drain effciency 2 C 55 - % v dd = 40 v, i dq = 60 ma, p in = 28 dbm oqpsk 3 aclr - -37 - dbc v dd = 40 v, i dq = 60 ma, p out = 33 dbm output mismatch stress 2 vswr C 10 : 1 C y no damage at all phase angles, v dd = 40 v, i dq = 60 ma, p in = 28 dbm notes: 1 measured in CGHV1F006S-AMP2 application circuit 2 pulsed 100 s, 10% duty cycle 3 oqpsk modulated signal, 1.6 msps, pn23, alpha filter = 0.2 offset = 1.6 mhz typical performance in application circuit CGHV1F006S-AMP2 at x-band, satcom figure 5. - typical small signal response of CGHV1F006S-AMP2 application circuit v dd = 40 v, i dq = 60 ma 0 10 20 30 m ag n i t u d e ( d b ) -30 -20 -10 7.0 7.2 7.4 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 m ag n i t u d e ( d b ) frequency (ghz) s21 s11 s22 cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 typical performance in application circuit CGHV1F006S-AMP2 figure 6. - typical oqpsk response v dd = 40 v, i dq = 60 ma, 1.6 msps, p out = 33 dbm typical performance in application circuit CGHV1F006S-AMP2 figure 7. - oqpsk transfer response v dd = 40 v, i dq = 60 ma, 1.6 msps, frequency = 8.4 ghz p out - 35 -34 -33 -32 -31 -30 15 20 25 30 35 40 a c l r (d b c ) g a i n (d b ) & d r a i n effi c i e n c y (% ) gain drain efficiency aclr -38 -37 -36 - 35 0 5 10 15 7.90 7.95 8.00 8.05 8.10 8.15 8.20 8.25 8.30 8.35 8.40 g a i n (d b ) & d r a i n effi c i e n c y (% ) frequency (ghz) aclr gain drain effciency -30 -25 -20 -15 -10 15 20 25 30 35 o q psk o ffs e t (d b c ) g a i n (d b ) a n d d r a i n effi c i e n c y (% ) gain eff -oset +oset -45 -40 -35 0 5 10 15 20 25 30 35 40 o q psk o ffs e t (d b c ) g a i n (d b ) a n d d r a i n effi c i e n c y (% ) output power (dbm) cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 typical performance in application circuit CGHV1F006S-AMP2 figure 8. - typical pulsed power response v dd = 40 v, i dq = 60 ma, 100 s, 10% duty, p in = 28 dbm CGHV1F006S-AMP2 application circuit bill of materials, satcom designator description qty r1 res, 15, ohm, +1/-1%, 1/16 w, 0402 1 r2 res, 100, ohm, +1/-1%, 1/16 w, 0603 1 c2, c3, c8 cap, 1.0 pf, 0.05 pf, 0402, atc 3 c1, c14 cap, 10 pf, 5%, 0603, atc 2 c4 cap, 10pf, 5%, 0603, x 1 c5,c10 cap, 470pf, 5%, 100v, 0603, x 2 c6, c11 cap, 33000 pf, 0805, 100v, x7r 2 c7 cap, 10 uf, 16 v, tantalum 1 c9 cap, 20 pf, 5%, 0603, atc 1 c12 cap, 1.0 uf, 100v, 10% x7r, 1210 1 c13 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 j3 header rt>plz .1cen lk 5pos 1 q1 qfn transistor cghv1f006s 1 55 60 65 70 75 38.0 38.5 39.0 39.5 40.0 d r a i n effi c i e n c y (% ) o u tp u t po w e r (d b m ) 35 40 45 50 36.0 36.5 37.0 37.5 7.80 7.90 8.00 8.10 8.20 8.30 8.40 8.50 d r a i n effi c i e n c y (% ) o u tp u t po w e r (d b m ) frequency (ghz) output power drain efficiency drain effciency output power CGHV1F006S-AMP2 application circuit cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 CGHV1F006S-AMP2 application circuit schematic, satcom CGHV1F006S-AMP2 application circuit outline, satcom c3 1.0 pf c6 0.033 c7 10 c9 20 pf c10 470 pf c13 33 c4 10 pf c14 1.0 pf c11 0.033 c12 1 1 2 3 q1 c1 1.0 pf c8 1.0 pf r2 100 ohm c5 470 pf c2 1.0 pf r1 15 ohm 1 2 3 4 5 j3 j1 j2 vd=+40v gnd vg=-2.0v to -3.5v typ cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 electrical characteristics when tested in cghv1f006s-amp3 at x-band, radar characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 8.5 - 9.6 ghz unless otherwise noted) gain g C 14.5 - db v dd = 40 v, i dq = 60 ma, p in = 0 dbm output power 2 p out C 38.5 C dbm v dd = 40 v, i dq = 60 ma, p in = 28 dbm drain effciency 2 C 52 - % v dd = 40 v, i dq = 60 ma, p in = 28 dbm output mismatch stress 2 vswr C 10 : 1 C y v dd = 40 v, i dq = 60 ma, p in = 28 dbm notes: 1 measured in cghv1f006s-amp3 application circuit 2 pulsed 100 s, 10% duty cycle typical performance in application circuit cghv1f006s-amp3 at x-band, radar figure 9. - typical small signal response v dd = 40 v, i dq = 60 ma 0 10 20 30 m ag n i t u d e ( d b ) -30 -20 -10 7.5 8.0 8.5 9.0 9.5 10.0 10.5 m ag n i t u d e ( d b ) frequency (ghz) s21 s11 s22 cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 typical performance in application circuit cghv1f006s-amp3 figure 10. - typical pulsed power response v dd = 40 v, i dq = 60 ma, 100 s, 10% duty, p in = 28 dbm cghv1f006s-amp3 application circuit bill of materials, radar designator description qty r1 res, 15, ohm, +1/-1%, 1/16 w, 0402 1 r2 res, 100, ohm, +1/-1%, 1/16 w, 0603 1 c1, c14 cap, 1.0 pf, 0.05 pf, 0603, atc 2 c2 cap, 1.0 pf, 0.05 pf, 0402, atc 1 c3, c8 cap, 0.8 pf, 0.05 pf, 0402, atc 2 c4 cap, 10 pf, 5%, 0603, atc 1 c5, c10 cap, 470 pf, 5%, 100 v, 0603, x 2 c6, c11 cap, 33000 pf, 0805, 100v, x7r 2 c7 cap, 10 uf, 16 v, tantalum 1 c9 cap, 20 pf, 5%, 0603, atc 1 c12 cap, 1.0 uf, 100v, 10% x7r, 1210 1 c13 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 j3 header rt>plz .1cen lk 5pos 1 q1 qfn transistor cghv1f006s 1 55 60 65 70 75 38.0 38.5 39.0 39.5 40.0 d r a i n effi c i e n c y (% ) o u tp u t po w e r (d b m ) 35 40 45 50 36.0 36.5 37.0 37.5 8.4 8.6 8.8 9.0 9.2 9.4 9.6 d r a i n effi c i e n c y (% ) o u tp u t po w e r (d b m ) frequency (ghz) output power drain efficiency drain effciency output power cghv1f006s-amp3 application circuit cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
13 cghv1f006s-amp3 application circuit schematic, radar cghv1f006s-amp3 application circuit outline, radar c3 0.8 pf c6 0.033 c7 10 c9 20 pf c10 470 pf c13 33 c4 10 pf c14 1.0 pf c11 0.033 c12 1 1 2 3 q1 c1 1.0 pf c8 0.8 pf r2 100 ohm c5 470 pf c2 1.0 pf r1 15 ohm 1 2 3 4 5 j3 j1 j2 vd=+40v gnd vg=-2.0v to -3.5v typ cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
14 electrical characteristics when tested in cghv1f006s-amp4 at 802.11 characteristics symbol min. typ. max. units conditions rf characteristics 1 (t c = 25 ? c, f 0 = 4.9 - 5.9 ghz unless otherwise noted) gain g C 13 - db v dd = 20 v, i dq = 30 ma, p in = 27 dbm drain effciency 2 C 27 - % v dd = 20 v, i dq = 30 ma, p in = 27 dbm oqpsk 3 aclr - -43 - dbc v dd = 20 v, i dq = 30 ma, p out = 27 dbm output mismatch stress 2 vswr C 10 : 1 C y no damage at all phase angles, v dd = 20 v, i dq = 30 ma, p in = 27 dbm notes: 1 measured in cghv1f006s-amp4 application circuit 2 single carrier wcdma, 3gpp test model 1, g4 dpch, 45% clipping, par = 7.5 db @ 0.01% probability on ccdf typical performance - cghv1f006s-amp4 at 802.11 figure 11. - typical small signal response v dd = 20 v, i dq = 30 ma 0 10 20 30 m ag n i t u d e ( d b ) -30 -20 -10 4.0 4.5 5.0 5.5 6.0 6.5 7.0 m ag n i t u d e ( d b ) frequency (ghz) s11 s21 s22 cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
15 typical performance in application circuit cghv1f006s-amp4 figure 12. - typical gain, effciency and wcdma performance vs frequency v dd = 20 v, i dq = 30 ma, p out = 27 dbm cghv1f006s-amp4 application circuit bill of materials at 802.11 designator description qty r1, r3 res, 1, ohm, +/-1%, 1/16 w, 0402 2 r2 res, 51.1, ohm, +/-1%, 1/16w, 0603 1 c2, c6, c11 cap, 1.8 pf, +/-0.1 pf, 0603, atc 3 c1 cap, 0.2 pf, +/-0.05 pf, 0402, atc 1 c3, c7, c12 cap, 470 pf, 5%, 100 v, 0603, x 3 c4, c8, c13 cap, 33000 pf, 0805, 100 v, x7r 3 c5 cap, 10 uf, 16 v, tantalum 1 c15 cap, 6.8 pf, 0.25 pf, 100 v, 0603 1 c9, c14 cap, 1.0 uf, 100v, 10% x7r, 1210 2 c10 cap, 33 uf, 20%, g case 1 j1, j2 conn, sma, panel mount jack, flange 2 pcb, rt5880, 0.020 thk, cghv1f006s 1 baseplate, cgh35015, 2.60 x 1.7 1 j3 header rt>plz .1cen lk 5pos 1 2-56 soc hd screw 1/4 ss 4 #2 split lockwasher ss 4 q1 qfn transistor cghv1f006s 1 -41 -40 -39 -38 -37 20 25 30 35 40 a c l r ( d b c) gai n ( d b ) & d r ai n ef f i ci en cy ( % ) gain drain efficiency aclr -45 -44 -43 -42 0 5 10 15 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 a c l r ( d b c) gai n ( d b ) & d r ai n ef f i ci en cy ( % ) frequency (ghz) aclr gain drain effciency cghv1f006s-amp4 application circuit cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
16 cghv1f006s-amp4 application circuit schematic cghv1f006s-amp4 application circuit outline effciency gain offset cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
17 cghv1f006s power dissipation de-rating curve figure 13. - cghv1f006s transient power dissipation de-rating curve note 1. area exceeds maximum case temperature (see page 2). electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm 2 (125 v to 250 v) jedec jesd22 c101-c 6 8 10 12 po w e r d i s s i p a ti o n (w ) 0 2 4 0 25 50 75 100 125 150 175 200 225 250 po w e r d i s s i p a ti o n (w ) maximum casetemperature ( c) note 1 cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
18 source and load impedances frequency (ghz) z source z load 1 49.67 + j32.81 184.11 + j6.66 3 11.54 + j3.96 38.83 + j56.37 6 5.94 - j17.97 13.03 + j16.16 10 11.87 - j77.62 11.79 - j17.43 12 47.42 - j205.35 16.39 - j46.22 15 33.78 + j251.03 163.61 - j268.44 note 1 : v dd = 40 v, i dq = 60 ma note 2 : impedances are extracted from source and load pull data derived from the transistor. d z source z load g s cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
19 product dimensions cghv1f006s (package 3 x 4 dfn) pin input/output 1 gnd 2 nc 3 rf in 4 rf in 5 nc 6 gnd 7 gnd 8 nc 9 rf out 10 rf out 11 nc 12 gnd note: leadframe fnish for 3x4 dfn package is nickel/palladium/gold. gold is the outer layer. cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
20 part number system parameter value units upper frequency 1 15.0 ghz power output 6 w package surface mount - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) cree gan high voltage cghv1f006s cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
21 product ordering information order number description unit of measure image cghv1f006s gan hemt each cghv1f006s-amp1 test board with gan hemt installed, 5.85 - 7.2 ghz, 50 v c-band under oqpsk each CGHV1F006S-AMP2 test board with gan hemt installed, 7.9 - 8.4 ghz, 28 v x-band satcom each cghv1f006s-amp3 test board with gan hemt installed, 8.5 - 9.6 ghz, 28 v x-band radar each cghv1f006s-amp4 test board with gan hemt installed, 4.9 - 5.9 ghz, 50 v 802.11 each cghv1f006s-tr delivered in tape and reel 250 parts / reel cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
22 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/ rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.313.5639 cghv1f006s rev 2.2 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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